| 摘要 |
PURPOSE:To prevent the integration density from being restricted by the collector area in forming an IIL circuit part by means of a washed emitter manner, by specifying the process order. CONSTITUTION:With an oxide film 101 as a mask, an n<+> type impurity is diffused into a p type semiconductor substrate 1 to form n<+> type buried layers 2 and 3. Then, with a resist 503 as a mask, B<+> ions are injected through an oxide film 106 to form a p type ion-injected layer 601. Then, after an n type epitaxial layer 4 has been grown and a separating film 103 has been formed, with a resist as a mask, B<+> ions are injected to form p type and p<+> type ion-injected layers 800, 810, 700 and 610 respectively. Then, a p<+> diffused layer 61 is connected with a p type buried layer 602, and respective electrodes 401-408 are formed. |
