| 发明名称 |
SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND FERROELECTRIC LAYER |
| 摘要 |
A semiconductor device according to an embodiment includes a first conductive layer, a second conductive layer, and a ferroelectric layer including hafnium oxide provided between the first conductive layer and the second conductive layer, a sum of hafnium (Hf) and oxygen (O) in the hafnium oxide being 98 atomic percent or more. |
| 申请公布号 |
US2016372478(A1) |
申请公布日期 |
2016.12.22 |
| 申请号 |
US201615257064 |
申请日期 |
2016.09.06 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
INO Tsunehiro;FUJII Shosuke;INUMIYA Seiji |
| 分类号 |
H01L27/115;H01L21/3105;H01L29/51;H01L21/02;H01L49/02;H01L29/78 |
主分类号 |
H01L27/115 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A semiconductor device, comprising:
a first conductive layer; a second conductive layer; and a ferroelectric layer including hafnium oxide provided between the first conductive layer and the second conductive layer, a sum of hafnium (Hf) and oxygen (O) in the hafnium oxide being 98 atomic percent or more. |
| 地址 |
Minato-ku JP |
