| 摘要 |
PURPOSE:To make it possible to easily obtain a multiplex semiconductor substrate, which is thin and uniform, by growing epitaxially a multiplex semiconductor crystal on a semiconductor substrate of high specific resistance, and then performing etching to the substrate. CONSTITUTION:On a high specific resistance semiconductor substrate 21 of cadmium.tellurium (CdTe) or the like having no impurity added, a crystal layer 22 of Hg1-xCdxTe is grown by liquid phase epitaxy. The layer 22 epitaxially grown is etched to the substrate 21 by using as a mask a photoresist film 23A formed into a predetermined pattern. Then, In is deposited by evaporation at both the ends of the layer 22 to form an infrared ray detecting element 24, an electrode region 25, and a light receiver 26. |
