| 摘要 |
PURPOSE:To obtain an MOSFET with which the trouble of destruction caused by the breaking of an N-inversion layer at the point directly below an electrode can be prevented by a method wherein a gate shield electrode is provided between a channel stopper P<+> layer and a drain electrode on the insulating film having the thickly formed circumferential part. CONSTITUTION:An insulating film 2 having the thickly formed circumferential region, an N<+> drain region 4, a P<+> region 8 to be turned into a channel stopper, a high withstand viltage N<+> layer 10, an interlayer insulating film 11 consisting of PSG and the like, and a gate shielding electrode 12 and the like are provided on a P<+> type Si substrate 1. At this point, a drain electrode 7, consisting of Al which will be resistance-connected using the contact section 4A on the region 4, is extended on the insulating film 11. Also, the electrode 12 is provided in such a manner that a part of the gate electrode 6, consisting of a polycrystalline Si, for example, is extended on the insulating film 2 having the thickly formed circumferential region and that the electrode 12 is intersected with the drain electrode at the point located between the region 8 and the electrode 7. As a result, even when an N inversion layer is generated on the semiconductor surface underlying the circumferential insulating film by applying high voltage on the drain electrode, the N inversion layer breaks off at the point directly below the electrode 12, and the breakage caused by the leakage of current and the like can be prevented. |
