| 摘要 |
PURPOSE:To form uniform vapor deposited thin films of good reoroducibility by using a gas produced by evaporating a liquefied gas as a source for generating gaseous molecular beams to be acted upon the gaseous flow of a vapor deposition material. CONSTITUTION:A vacuum vessel 17 is evacuated to about 10<-5>-10<-6>torr, and a film 6 is vapor deposited by the atoms to be vapor deposited from an evaporating source 3. On the other hand, a liquefied gas 18 is introduced into a molecular beam source cell 1 and is heated by an electric power sourcd 2' and a heater 2, whereby the gas 18 is evaporated and is acted upon a vapor deposition material through an ejection hole 20. At the same time, the rate of evaporation of the gas 18 is controlled. Since the molecular beams scattering from the cell are collimated, they act effectively on the atoms to be vapor deposited from the evaporating source mutually near the film 6 on a cooling roll 7. Hence, the degree of vacuum in the vessel 17 is maintained high except near the places where the molecular beams pass and the thin film of controlled properties is formed efficiently. |
