MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

PURPOSE:To obtain a high breakdown strength gate insulating thin film by a method wherein either PCl3 or POCl3 or PO(OCH3)3 goes into contact with SiO2 prior to pyrolysis of SiH4 producing a polycrystalline Si gate on SiO2 and then the selected one of the three is blended with SiH4. CONSTITUTION:Either PCl3 or POCl3 or PO(OCH3)3 is caused to contact gate insulator film forming SiO2. The resultant mixture and SiH4 are heated at 700 deg.C for pyrolysis of SiH4 leading to the formation of polycrystalline Si, when P is reduced on the SiO2 to adsorb H generated by the decomposition of SiH4. This eliminates H otherwise penetrating the SiO2 layer to cause reduction leading to creation of defects, preventing gate insulator film breakdown strength from being lowered.