| 摘要 |
PURPOSE:To obtain microminiature patterns by executing plasma etching by O2 to a polyimide polymer material using a positive resist mask. CONSTITUTION:An insulating film 5 such as SiO2 is provided during or after formation of various functional portions on a conductive or insulated substrate 4, and a metal wiring 1 such as Al is formed. A metal wiring 2 is stacked again with the polyimide use as an interlayer insulation film 6. A window 3 is opened to the polyimide layer 6 by the O2 gas plasma etching using a positive resist mask and the resist mask is removed by an acetone. The etching rate of positive photo resist is about 1/3-1/5 of the polyimide film, as compared with that of O2 gas plasma etching. Therefore, a highly accurate and microminiature polyimide pattern can be formed easily and stably. |
