| 摘要 |
<p>PURPOSE:To manufacture a unerasable PROM which can be rewritten by forming a short-circuit type memory cell and an open type memory cell. CONSTITUTION:PROM elements 11, 12, 21, 22 are formed at intersecting points between address lines Y1 and Y2 and data lines X1 and X2. The PROM element 11 consists of an N-P-N type transistor 111 and a fuse 112, and the transistor 111 and the fuse 112 are connected in series. The collector of the transistor 111 is connected to the data line X1, the emitter of the transistor 111 is connected in series with the fuse 112, and the other terminal of the fuse 112 is connected to the address line Y1. The element 11 displays the state of a memory of one bit.</p> |
