METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

An insulating layer is formed on a substrate made of silicon carbide. By performing etching using a mask layer formed on the insulating layer, a contact hole is formed in the insulating layer to expose a contact region, which is a portion of a main surface of the substrate. The step of forming the contact hole includes a step of providing the contact region with a surface roughness Ra of not less than 0.5 nm. An electrode layer is formed in contact with the contact region. By heating the electrode layer and the substrate, siliciding reaction is caused between the electrode layer and the contact region.

主权项

1. A method for manufacturing a silicon carbide semiconductor device comprising steps of:
forming an insulating layer on a substrate having a main surface and made of silicon carbide; forming a mask layer on said insulating layer, said mask layer having an opening; forming a contact hole in said insulating layer to expose a contact region by etching said insulating layer using said mask layer, said contact region being a portion of said main surface of said substrate, the step of forming said contact hole including a step of providing said contact region with a surface roughness Ra of not less than 0.5 nm; forming an electrode layer in contact with said contact region of said substrate; and causing siliciding reaction between said electrode layer and said contact region of said substrate by heating said electrode layer and said substrate.