| 发明名称 |
PVD DEPOSITION AND ANNEAL OF MULTI-LAYER METAL-DIELECTRIC FILM |
| 摘要 |
The present disclosure provides a film stack structure formed on a substrate and methods for forming the film stack structure on the substrate. In one embodiment, the method for forming a film stack structure on a substrate includes depositing a first adhesion layer on an oxide layer formed on the substrate and depositing a metal layer on the first adhesion layer, wherein the first adhesion layer and the metal layer form a stress neutral structure. |
| 申请公布号 |
US2016372330(A1) |
申请公布日期 |
2016.12.22 |
| 申请号 |
US201514745367 |
申请日期 |
2015.06.19 |
| 申请人 |
Applied Materials, Inc. |
发明人 |
YU Minrui;MA Kai;KWON Thomas;SINGH Kaushal K.;PING Er-Xuan |
| 分类号 |
H01L21/285;C23C16/06;H01L23/532;C23C28/00;H01L21/768;C23C14/06;C23C14/16 |
主分类号 |
H01L21/285 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a film stack on a substrate, comprising:
depositing one or more adhesion layers on an oxide layer formed on the substrate; and forming a stress neutral structure by depositing a metal layer on a first adhesion layer of the one or more adhesion layers. |
| 地址 |
Santa Clara CA US |
