发明名称 EXPOSURE METHOD
摘要 PURPOSE:To enable a base to be minutely exposed to light of a continuous resist form in the case of exposing the base having light-transmitting parts and light-reflecting parts, by controlling reflectance of the body on which the base is placed. CONSTITUTION:In a base having a silicon on sapphire structure, a surface device part has 50% reflectance of ordinary UV rays, and a field part free from silicon has 9% reflectance. The surface of a body wafer chuck on which the base is placed is coated with silicon and adjusted so as to have about 50% reflectance of light incident from the air. The sapphire surface reflects 9% of direct incident light, the next sapphire interface its 8%, and the next chuck interface its 34% to reflect its 50% in the total. Since this reflection is similar to that of 50% of the device part, and both have the same exposure, a continuous resist form can be made on the base.
申请公布号 JPS58152244(A) 申请公布日期 1983.09.09
申请号 JP19820036155 申请日期 1982.03.08
申请人 NIPPON DENKI KK 发明人 HAYAMA HIROSHI
分类号 G03B27/02;G03F7/20 主分类号 G03B27/02
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