发明名称 Integrated fan-out structure with openings in buffer layer
摘要 A package includes a molding compound, a through-via penetrating through the molding compound, a device die molded in the molding compound, and a buffer layer on and contacting the molding compound. An opening is through the buffer layer to the through-via. The buffer layer has ripples in a plane parallel to an interface between the molding compound and the buffer layer and around a circumference of the opening. Other embodiments contemplate an additional package bonded to the package, and methods for forming the package.
申请公布号 US9455211(B2) 申请公布日期 2016.09.27
申请号 US201414577450 申请日期 2014.12.19
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Chiu Wu Sen;Cheng Li-Hui;Tsai Po-Hao;Lin Jing-Cheng
分类号 H01L23/31;H01L23/48;H01L21/768;H01L25/10;H01L21/56;H01L23/00;H01L25/00;H01L21/683;H01L25/065 主分类号 H01L23/31
代理机构 Slater Matsil, LLP 代理人 Slater Matsil, LLP
主权项 1. A structure comprising: a first package comprising: a molding compound; a through-via penetrating through the molding compound; a device die molded in the molding compound; and a buffer layer on and contacting the molding compound, an opening being through the buffer layer to the through-via, the buffer layer having ripples in a plane parallel to an interface between the molding compound and the buffer layer and around a circumference of the opening, wherein a peak and a valley of the ripples are both disposed in the plane parallel to the interface between the molding compound and the buffer layer, and a guiding trench, wherein the guiding trench forms a ring, and wherein the guiding trench completely encircles a center portion of the buffer layer in a top-down view of the structure, with the center portion of the buffer layer overlapping an entirety of the device die.
地址 Hsin-Chu TW