| 摘要 |
<p>PURPOSE:To prevent an amorphous film of tellurium or bismuth from being oxidized and enhance stability with time of a recording medium, by providing an oxidized film between the amorphous film and a substrate, in an optic recording film using an amorphous film of tellurium or bismuth. CONSTITUTION:In a container 6 into which an inert gas is introduced through a gas-introducing port 7 to obtain a pressure of 10<-4>-10Torr, a high-frequency is impressed on a high-frequency electrode 10 to conduct an electric discharge, and tellurium or bismuth is evaporated from a vapor depositing heater 9, whereby an amorphous film of tellurium or bismuth is formed on the substrate 11. Thereafter, an oxygen gas is introduced into the container 6 to oxidize the entire body of the film, thereby forming an oxidized layer 4. Then, the inert gas is introduced into the container 6, and tellurium or bismuth is vapor-deposited while reconducting electric discharge to form an amorphous film on the oxidized film 4. The surface of the film 5 may be oxidized to form an oxidized film 4'.</p> |
