| 摘要 |
PURPOSE:To obtain antistatic effect and reflection preventive effect of a photomask prepd. by plasma etching using fluorine or similar gas by providing a light shielding metallic film of a specified element on a glass base plate, forming further a reflection preventive layer of an oxide of a specified element thereon. CONSTITUTION:A light shielding metallic film 3 is provided on a glass base plate 1 using Se, Ge, Re, Ir, V or Ru, and a reflection preventive film 4 is formed thereon using an oxide of Se, Ge, Re, Ir, or V. Further, a transparent conductive film 2 is provided between the base plate 1 and the film 3 using an oxide of Fe, Cr, Pb or Pb.Cr. The films 3 and 4 easily etched, whereas the conductive film 2 has a resistance. Therefore, the easily etchable films 3 and 4 serve as masking material, and the hardly etchable conductive film 2 prevents the breakage due to electric charge and multiple reflection because of its antistatic effect. |
