发明名称 METHOD AND APPARATUS FOR DEPOSITING MATERIAL
摘要 PROBLEM TO BE SOLVED: To provide a method for depositing a dielectric material on a substrate in a chamber by pulse DC magnetron sputtering and uniformly achieving the thickness of the deposited film.SOLUTION: A method for depositing a dielectric material on a substrate 26 in a chamber by pulse DC magnetron sputtering using a pulse DC magnetron device 24 for creating one or more primary magnetic fields comprises: sputtering a sputtering material from a target 22; separating the target 22 from the substrate 26 by a space of 2.5-10 cm; creating a secondary magnetic field 21 in the chamber; and expanding plasma created by the pulse DC magnetron device 24 toward one or more walls of the chamber by the secondary magnetic field 21.SELECTED DRAWING: Figure 4
申请公布号 JP2016194155(A) 申请公布日期 2016.11.17
申请号 JP20160070211 申请日期 2016.03.31
申请人 SPTS TECHNOLOGIES LTD 发明人 BURGESS STEPHEN R;HYNDMAN RHONDA;RASTOGI AMIT;EDUARDO PAULO LIMA;CLIVE L WIDDICKS;RICH PAUL;SCOTT HAYMORE;DANIEL COOK
分类号 C23C14/34;C23C14/06;H05H1/24 主分类号 C23C14/34
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