发明名称 |
METHOD AND APPARATUS FOR DEPOSITING MATERIAL |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for depositing a dielectric material on a substrate in a chamber by pulse DC magnetron sputtering and uniformly achieving the thickness of the deposited film.SOLUTION: A method for depositing a dielectric material on a substrate 26 in a chamber by pulse DC magnetron sputtering using a pulse DC magnetron device 24 for creating one or more primary magnetic fields comprises: sputtering a sputtering material from a target 22; separating the target 22 from the substrate 26 by a space of 2.5-10 cm; creating a secondary magnetic field 21 in the chamber; and expanding plasma created by the pulse DC magnetron device 24 toward one or more walls of the chamber by the secondary magnetic field 21.SELECTED DRAWING: Figure 4 |
申请公布号 |
JP2016194155(A) |
申请公布日期 |
2016.11.17 |
申请号 |
JP20160070211 |
申请日期 |
2016.03.31 |
申请人 |
SPTS TECHNOLOGIES LTD |
发明人 |
BURGESS STEPHEN R;HYNDMAN RHONDA;RASTOGI AMIT;EDUARDO PAULO LIMA;CLIVE L WIDDICKS;RICH PAUL;SCOTT HAYMORE;DANIEL COOK |
分类号 |
C23C14/34;C23C14/06;H05H1/24 |
主分类号 |
C23C14/34 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|