| 摘要 |
PURPOSE:To contrive to enhance the manufacturing process of an Si semiconductor device by a method wherein angle polishing of the device is performed using an alkali aqueous solution containing an abrasive. CONSTITUTION:About 200g of an abrasive having 0.02-0.2mum of grain size and mainly consisting of Al2O3 is mixed to a caustic soda aqueous solution of 0.2mol. to prepare an alkali abrasive 1. Angle polishing is performed on Pyrex glass 6 polished by roughness finish of #2,000-#3,000 pouring the alkali abrasive 1 prepared previously. At this time, a semiconductor sample 5 is a sample manufactured by forming a buried layer of arsenic at 1,200 deg.C in a P type Si substrate, and by forming an N type epitaxial growth layer thereon, the sample thereof is stuck on an angle polishing jig 3 by electron wax 4, and angle polishing is performed. Accordingly, a stain etching process can be omitted, and operating time can be excluded by the amount necessary therefor. |
