MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To make an insulating separation flat without any bird's beak at all producing semiconductor device with high density at high speed by a method wherein O2 ion is implanted in a region where separating oxide film is formed accelerating the oxiding speed in the region. CONSTITUTION:A separating groove 100 is formed by the same procedures as usual to form an O2 implanting layer 20 in a substrate 1 on the groove bottom using a resist 3 as a mask. The resist 3 is removed to form Si3N4 film 4 on the groove side walls by the same procedures as usual. Succeedingly the groove 100 is high pressure-oxidized using the Si3N4 films 2 and 4 as stoppers to fill the groove 100 with an oxide film 5. At this time, the O2 implanting film 20 is easily changed into an oxide film by high pressure processing in case of oxidiation while higher and lower parts of the layer 20 are encircled by O2 with high concentration produced by implantation while surplus O2 is diffused from the layer 20 remarkably accelerating the oxidizing rate to halve the thickness of the Si3N4 films 2 and 4 compared with the conventional thickness. Next the film 2 is removed to finish the insulating separation. In such a constitution, a semiconductor device with high density may be produced at high speed.