| 摘要 |
PURPOSE:To enable to prevent the diffusion of electrode metal into a semiconductor by a method wherein the position of a metallic electrode is kept distant to the degree that the connection part of a polycrystalline Si and an impurity layer does not superposed on the junction of the Si and the electrode. CONSTITUTION:The impurity layer 3 is formed with an oxide film 2 selectively formed in one surface of an Si substrate 1 as a mask. Further, an oxide film 4 is formed, and a semiconductor layer, e.g., the polycrystalline Si layer 5 is grown over the entire surface from above and then connected to the impurity region 3 at the middle part. This Si layer 5 is thermally oxidized after the diffusion of an impurity of the same conductivity type as that of the layer 3, thus obtaining the electric conduction between the Si layer 5 and the layer 3 as a low resistance layer, and forming an oxide film 6. Thereafter, the film 6 distant from the connection part of the layers 5 and 3 in a transverse direction by over several microns is opened, and then the metallic electrode 7 is formed by vapor deposition. |
