| 摘要 |
PURPOSE:To reduce the generation of growing failures by growing a fundamental layer which is easy for crystal growth and subsequently a lower clad layer before growing the lower clad layer on a current narrowing layer in which a striped groove is formed. CONSTITUTION:On a current stricture layer 2 in which a groove 3 is formed, a lower clad layer fundamental layer 11 is grown, after which a lower clad layer 4 is formed on that layer 11. At this time, a mixed crystal ratio of Al of the lower clad layer fundamental layer 11 is made to be smaller than that of the lower clad layer 4. A thickness of the fundamental layer 11 is so determined that the groove 3 is not buried by the layer 11 completely. It is difficult to liquid-phase grow the layer of a large mixed crystal ratio of Al like the lower clad layer 4 directly on the current narrowing layer 2 without a defect, but growth of the lower clad layer fundamental layer 11 of reduced mixed crystal ratio of Al is easier as compared with the above case and a growing failure is hardly produced. As the lower clad layer 4 is grown continuously on that lower clad layer fundamental layer 11, there is almost no growing failure between the layers 11 and 4. |
