| 摘要 |
PURPOSE:To obtain high-purity metal by rapid decomposition at a low temp. by generating low-temp. plasma in vacuum to decompose metallic iodide. CONSTITUTION:Metallic iodide 1 of V, Nb, Ta, Ti, Zr or other metal is gasified and fed into a thermal decomposition chamber kept under reduced pressure. Low-temp. plasma 2 is generated in the system at a low temp. to activate the metallic iodide 1. The activated metallic iodide 1 is rapidly decomposed at said low-temp. and high-purity metal is obtd.
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