| 摘要 |
PURPOSE:To maintain a high photodetection rate even when picture element is reduced in size and to improve sensitivity over the whole wavelength range of visible light by arranging a photoconductive filme as a photodetection area over gate areas of SITs which constituting respective picture elements in a connection state. CONSTITUTION:An epitaxial layer 22 cinstituting a channel and the source area 23 and gate area of a static induction type transistor SIT are formed on a silicon substrate 21 which constitutes the drain of the SIT. A source electrode 29 is connected to the source 23 and sources of a group of SITs arrayed in one direction are connected mutually. The photoconductive film 30 is formed on a gate electrode 27 and made of a compound semiconductor such as amorphous silicon and ZnSe. A transparent electrode 31 is formed on the conductive film 30 along the SIT group arrayed in the direction perpendicular to the electrode 29. In such constitution, the electrodes 27 and 31 and conductive film 30 between them form a capacitor.
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