| 摘要 |
PURPOSE:To prevent the generation of the accident of disconnection at a stepped section even in a fine multilayer interconnection by forming an Si nitride film onto a lower layer film, to which an Si oxide film is shaped through a sputtering method, through a plasma CVD method and forming an inter-layer insulating film. CONSTITUTION:A sputtering oxide film 204 is formed to a semiconductor substrate 201, to which an electrode wiring layer 203 is shaped, to a desired form. A plasma nitride film 205 is shaped onto the film 204. It is preferable that the thickness of the film 204 extends over 0.1-1.0mum and the thickness of the Si nitride film over 0.5-2.0mum. Since the oxide film is shaped through a sputtering method according to the manufacture, the oxide film excellently creeps and can be attached uniformly, and a foundation insulating film having a preferable positive slope form can be shaped. The film 205 is grown on the film 204 having said form. According to a plasma CVD method, the step coverage of the nitride film is improved, and the nitride film can be stuck precisely onto a slope. Accordingly, since the film 205 is formed gently, the next second layer electrode wiring 206 is also shaped smoothly, and there is no possibility of disconnection. |
