| 摘要 |
PURPOSE:To enable to display the effect of an electron beam exposure when a mask pattern is microscopically formed by a method wherein a mask layer is formed using a material of good heat conductivity. CONSTITUTION:A resist film 3 is formed on the blank mask whereon a mask layer 2a is provided on a glass substrate 1, and after an electron beam is exposed on an irradiation region 4, the removal region 5 corresponding to the irradiation region 4 on the resist layer 3 is removed by developing. Subsequently, a mask pattern is formed by removing the removal region 6 of the mask layer 2a by performing an etching using the resist layer 3 as a mask. The mask 2a consists of the Al of approximately 0.01mum in thickness and the Cu of approximately 0.1mum in thickness, for example, and the Al is faced to the substrate 1 to increase the adhesiveness with the substrate 1. When an electrode beam is made to irradiate, the temperature rise on the circumference of the irradiation region 4 is lowered than before, and the patterns of the removal regions 5 and 6 are coincided with each other. The mask 2a may be formed with the alloy of Al and AlCu, and the desirable thickness of the mask 2a is 0.1-0.4mum. |
