发明名称 CRYSTAL OF GERMANIUM AND GALLIUM ARSENIDE
摘要 <p>CRYSTAL OF GERMANIUM AND GALLIUM ARSENIDE A crystal of Ga(1-0.5x)Gex As(1-0.5x). The crystals are grown by epitaxial chemical vapor deposition with varying concentrations of the germanium which may be positioned on either or both the gallium and the arsenic sites in the respective sublattices.</p>
申请公布号 CA1200468(A) 申请公布日期 1986.02.11
申请号 CA19810375113 申请日期 1981.04.09
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人
分类号 C30B29/42 主分类号 C30B29/42
代理机构 代理人
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