| 摘要 |
PURPOSE:To obtain the titled device of high output with a large spot ellipticity by a method wherein an N-epitaxial layer is laminated on a P type substrate having a projection, and groove bottoms are made to reach the substrate by forming three parallel ridges; successively, a P-layer, an active layer, and the like are successively laminated. CONSTITUTION:A mesa is formed in the <011> direction by etching the (100) plane of the P type GaAs substrate 1, and an N type blocking GaAs 2 is deposited to a flat surface. The parallel ridges are provided in the <011> direction, thus making grooves among the ridges located on the mesa and the groove bottoms reach the substrate 1. Next, a P type Ga1-xAlxAs clad layer 3, a Ga1-yAlyAs active layer 4, an N type Ga1-xAlxAs clad layer 5, and an N type GaAs layer 6 are laminated, and ohmic electrodes 7 and 8 are attached. Light generated in the active layer 4 by conduction is absorbed to the substrate above the ridges and confined in the grooves, where stable lateral mode oscillation can be obtained. Since the groove interval is very narrow to almost the same degree as the width, beams produced above the grooves become spots of high output in long-elliptic form by the superposition of skirts. This laser array is effective in information erasure. |
