发明名称 |
DEPOSITING METHOD OF FILM |
摘要 |
PURPOSE:To form an always satisfactory thin film on a cylindrical substrate by providing the substrate and counter electrode in a vacuum reaction vessel, depositing the thin film on the substrate by glow discharge and renewing the counter electrode when the thin film sticking to the counter electrode attains a specific thickness. CONSTITUTION:The cylindrical substrate 1 for an electrophotographic sensitive body is placed on a supporting jig in the vacuum reaction vessel 5 and is heated to the prescribed temp. by a heater 3. The inside of the vessel 5 is evacuted through a discharge port 7 and a geseous raw material contg. silicon is introduced through an introducing port 6 into the vessel and is adjusted to about 10<-2>-10 Torr pressure. A DC voltage is impressed in this state between the counter electrode 2 and the substrate 1 by a power source 4 to execute glow discharge so that the thin film is deposited on the substrate 1. The electrode 2 is renewed when the thickness of the thin film sticking to the electrode 2 attains >=2mu in this operation. The condition of the plasma is thus uniformly maintained and the uniform film thickness distribution is obtd. |
申请公布号 |
JPS6152362(A) |
申请公布日期 |
1986.03.15 |
申请号 |
JP19840171251 |
申请日期 |
1984.08.17 |
申请人 |
MITSUBISHI CHEM IND LTD |
发明人 |
YOSHITOMI TOSHIHIKO;HORIUCHI HIROSHI;SATO YOSHIHARU |
分类号 |
C23C16/24;C23C16/44;C23C16/50;C23C16/503;(IPC1-7):C23C16/24 |
主分类号 |
C23C16/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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