FORMATION OF NITRIDE FILM ON SEMICONDUCTOR SUBSTRATE,申请号JP19850157466-传众专利搜索

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发明名称	FORMATION OF NITRIDE FILM ON SEMICONDUCTOR SUBSTRATE
摘要
申请公布号	JPS6218044(A)	申请公布日期	1987.01.27
申请号	JP19850157466	申请日期	1985.07.17
申请人	FUJI ELECTRIC CO LTD	发明人	SATO NORITADA;SEKI YASUKAZU
分类号	H01L21/318	主分类号	H01L21/318
代理机构		代理人
主权项
地址

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