| 摘要 |
PURPOSE:To eliminate the possibility of impurities resulting from raw-material powder and a residual binder, and to reduce a dislocation and the lattice defect of a crystal significantly by using a metallic compound manufactured through a vapor phase growth method for doping a P-type impurity for a semiconductor substrate as an impurity diffusion source. CONSTITUTION:A metallic compound employed as a P-type impurity is selected from the oxide and nitride of boron, aluminum, gallium, indium, etc., and the nitride is reacted with nitrogen or ammonia or the like. When PBN is doped, a method in which only the surface of a substance formed into a wafer shape having approximately the same diameter as a semiconductor substrate is oxidized by oxygen or steam or the like, the semiconductor substrates and the substances are arranged alternately into a quartz tube and the inside of the quartz tube is treated at a temperature of approximately 700-1,300 deg.C in a non-oxidizing gas such as the atmosphere of nitrogen, argon, helium, etc. is adopted.
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