METHOD AND DEVICE FOR FILM FORMATION BY LOW-TEMPERATURE PLASMA

摘要

PURPOSE:To form a good-quality and flat insulating insulating film by a low- temperature plasma by cutting projections on the surface of the film while controlling the velocity of the ion flow for irradiating a sample. CONSTITUTION:A bias potential from a variable power source 16 is applied to a grid electrode 15 of this plasma film forming device. When a film is formed on the surface of a sample 10 without applying a bias potential to the grid electrode 15, an insulating film 14 is formed on the surface of the sample. The sample 10 is irradiated with the ions in a plasma 6 drawn into a sample chamber 7 from a plasma generating chamber 3 and are accelerated under the condition that a bias voltage is applied to the grid electrode 15 while stopping the supply of a film forming material gas 8. The ions bump against the side planes of projections 14b of the insulating film 14 and the projections are cut off gradually as A B C D E... to form a nearly flat surface at a last stage.