| 摘要 |
PURPOSE:To obtain a light-weight compound semiconductor solar cell having high photoelectric conversion efficiency by previously forming a plurality of mutually orthogonal grooves to the surface of an Si substrate, growing a compound semiconductor layer, flattening the compound semiconductor layer by mechanical force and generating cracks only in the grooves. CONSTITUTION:A plurality of grooves 12 are worked vertically in a latticed manner in parallel with the surface of an orientation flat in the surface of an n<+> type Si substrate 11. An n-type GaAs layer 13 is shaped orto the substrate 11 by using an epitaxial growth technique, a p-type GaAs layer 14 is grown, and a p-type GaAlAs layer 15 is grown. A section corresponding to the upper section of the groove 12 in the layer 15 is removed through etching, and employed as a contact section 16 for a solar cell. A resist is applied onto the layer 15 at that time, and a mask is aligned through bonding and exposure, thus flattening the whole of the grown substrate, then preventing the deformation of the substrate due to the generation of a crack 17 in the n and p-type GaAs layers 13,14 grown in the groove 12. An insulating film 18 in a contact section 16 is removed, and a p side electrode 19 consisting of an Au-Zn alloy layer is formed. An n side electrode 20 is shaped on thc back of the substrate. |
