| 摘要 |
PURPOSE: To make it possible to maintain crystal defects sufficiently for bringing about gathering effect in the entire processes of circuit element manufacturing, by providing strain in the back surface in manufacturing an Si semiconductor substrate, performing heat treatment, and yielding many crystal defects for causing the strain in the back surface of the substrate. CONSTITUTION:Fine SiO2 grains 2 of about 0.1mum are made to hit the back surface of a coarsely polished semiconductor substrate 1. Thus mechanical flaws reaching the depth of about 5mum are imparted. In this way, back surface strain 3 is introduced in the crystals on the back surface. Heat treatment is performed at a temperature of 1,100 deg.C in a steam atmosphere. Thus strain- yielded crystal defects 4 in the back surface are formed. The upper surface is finished by mirror surface polishing. The applicable range of the heat treating temperature for forming many strain-yielded crystal defects in the back surface is 1,050-1,150 deg.C.
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