| 摘要 |
PURPOSE:To enable a photodetector to be equipped with a film of uniform quality even when a part of a semiconductor thin film constituting the photodetector is allowed to cover almost all the insulating surface of a supporting substrate by a method wherein a conductive film thinner than a semiconductor film is positioned between a semiconductor thin film in an output terminal forming region and an insulating surface of the supporting substrate. CONSTITUTION:A semiconductor thin film 3 extends but a little beyond the circumferences of a light-receiving region and of a light-receiving electrode film 2. The semiconductor thin film 3 in addition covers almost all the surface of one of the primary surfaces 1a of a supporting substrate 1 containing a terminal region wherein output terminals 6a and 6b will be built. With the semiconductor thin film 3 covering almost all the surface of one of the primary surfaces 1a of the supporting substrate 1, photolithography or masking is not needed for the patterning of the semiconductor thin film 3, which simplifies the manufacturing process concerned and prevents films from irregularities. On the surface of an extension 2e in the light- receiving surface electrode 2, islands are formed of a conductive paste such as a silver paste by means of screen-printing or the like. After this, baking is accomplished for the formation of a conductive film 7a, which is followed by the formation of said semiconductor thin film 3.
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