| 摘要 |
A semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first interconnection section, a second interconnection section, and a varistor film. The semiconductor layer includes a light emitting layer. The first electrode is provided in a emitting region on the second surface. The second electrode is provided in a non-emitting region on the second surface. The first interconnection section is provided on the first electrode and electrically connected to the first electrode. The second interconnection section is provided on the second electrode and on the first electrode and electrically connected to the second electrode. The varistor film is provided in contact with the first electrode and the second interconnection section between the first electrode and the second interconnection section. |
| 主权项 |
1. A semiconductor light emitting device comprising:
a semiconductor layer including a light emitting layer, a first surface, and a second surface opposite to the first surface; a first electrode provided in an emitting region on the second surface; a second electrode provided in a non-emitting region on the second surface; a first interconnection section provided on the first electrode and electrically connected to the first electrode; a second interconnection section provided on the second electrode and on the first electrode and electrically connected to the second electrode, wherein a portion of the second interconnection section is opposed to the first electrode; a varistor film provided in direct contact with the first electrode and the second interconnection section between the first electrode and the portion of the second interconnection section opposed to the first electrode, wherein the varistor film includes an oxide material; a first insulating film provided on the second surface and a side surface of the semiconductor layer continuing from the first surface, the first insulating film not including the varistor film; and a second insulating film provided between the first interconnection section and the second interconnection section and having a higher breakdown voltage than the varistor film, wherein: the first insulating film covers an end surface of the light emitting layer and has a higher breakdown voltage than the varistor film, and the varistor film includes at least one of BaTiO3, SrTiO3, ZnO, BiO, CoO, MnO, SbO, CrO, and NiO. |
