| 摘要 |
PURPOSE:To obtain the phosphorus impurity distribution of a desired n well only through ion implantation, and to realize a stable memory element, etc., operating at high speed easily by using a high-energy ion implantation method. CONSTITUTION:A p-Si layer 12 is formed, phosphorus ions are implanted at 200keV-1MeV by employing a high-energy ion implantation device, and an n well 25 is shaped through heat treatment (annealing at 1000 deg.C or less for recovering the damage of ion implantation) as required. n-MOS transistors 16, 17 are formed, and a p-MOS transistor 26 is further shaped. The p-MOS transistor 26 consists of a source 27, a drain 28 and a gate electrode 29. A CMOS constituting peripheral circuit can be formed by the n-MOS transistor 17 and the p-MOS transistor 26. Accordingly, a stable memory operating at high speed can easily be manufactured. |
