| 摘要 |
The method relates to the forming of Al2O3 layer for gate insulation by chemical evaporation deposit method in the process of producing MOS transistor. In place of the conventional silicon oxide SiO2, an aluminum layer Al2O3 is formed by vapor -deposit from chemical reaction between the aluminum source and oxygen source separately supplied. Thus, the gate oxide layer is achieved ar relatively lower temperature than the oxidation of the SiO2 layer, also in a shorter time.
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