| 摘要 |
<p>PURPOSE:To protect a semiconductor integrated circuit device from electrostatic breakdown by a method wherein a island part is provided with leads, which are separated from stitches and are directly connected with the island part, independent of leads for input/output and a power source and an initial static electricity is prevented from electrification. CONSTITUTION:Leads 14 which are directly connected to as island part 3 are provided in addition to leads 12 being connected with input/output and a power source. A pellet 1 is mounted on the island part 3 prevented a static electricity by the leads 14 with such a brazing metal an Au-Si material. The pellet 1 is connected with stitches 4, 5, 6 and 7 by bonding bonding wires 8, 9, 10 and 11. Accordingly, no electrostatic breakdown is generated at the time of assembly of the pellet 1. Thereby, a semiconductor integrated circuit device is protected against electrostatic breakdown.</p> |
