| 摘要 |
PURPOSE:To make it possible to form a gettering layer without the remnant of a contamination source of a wafer, by jetting ice particles, forming lattice defects on the rear surface of a semiconductor wafer, and introducing impurities in the entire surface by an impurity introducing method such as an ion implantation. CONSTITUTION:Lattice defects as a gettering layer are introduced in the rear surface of a semiconductor wafer 13 by using an ice making device 12. For this purpose, ice particles 8 are jetted from a blasting device 11 of the ice making device 12 so that the particles hit the rear surface of the semiconductor wafer 13, to yield the lattice defects. Thereafter, semiconductor impurities of group III-V and VIII elements or compounds and the like including said elements are introduced in the rear surface of the semiconductor wafer 13. Thus a gettering layer 14 is effectively formed as a lattice deffect layer. When the semiconductor impurities are introduced, not only the ion implanting method but also ordinary impurity introducing methods such as a diffusing method can be used. Thus a high gettering effect can be obtained, and contamination problems can be solved.
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