| 摘要 |
PURPOSE:To measure characteristics using a small current of less than 100 mA and contrive not to damage the needle electrode of a probe card by providing a resistance element that has the same diffusion structure as that of a collector resistance at a position comprising a small area in the peripheral vicinity so as to be convenient to come in contact with a probe card electrode, thereby investigating the above resistance element using a small current at ever semiconductor device when a wafer test is carried out. CONSTITUTION:After forming N<+> buried regions 3 and 3, a vapor growth layer 4 is deposited at the surface part of a P-conductivity type semiconductor substrate 2. At one side of an island region which is obtained by setting up element isolation regions 5 after surrounding the buried regions 3 and 3, a bipolar element is formed and also at the other side of the above island region, a resistance element is formed. On the occasion of forming the bipolar element, deep N<+> diffusion regions 6 connecting to the buried regions 3 and 3 are prepared and they are drawn to the surface of the vapor growth layer 3. Al, one of the conductive metals is deposited through processes of vaporization or sputtering at the deep N<+> diffusion regions 6 and 6 of emitter and base layers 8 and 9 and a resistance element as well as at the deep N<+> diffusion region 6 which is arranged at the island region forming an element and then, emitter, base, and collector electrodes 10, 11, and 12 as well as resistance electrodes 13 and 13 are established.
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