| 摘要 |
PURPOSE:To improve high-frequency characteristics, by arranging wires connected to a plurality of high-frequency transistor chips respectively through an input lead and an MOS capacitor, in tournament configurations. CONSTITUTION:Wire 9 connecting an input lead 7 to an MOS capacitor 6, wires 10a and 10b connecting the MOS capacitor 6 to an MOS capacitor 5 and wires 11a-11d connecting the MOS capacitor 5 to emitter electrodes 2a-2d of transistor chips 1a-1d are connected in tournament configurations as a whole. In case of 2<n> transistor chips, (n) MOS capacitors are provided. In this manner, uniform distances can be defined between the input lead 7 and the respective transistor chips 1a-1d, so that phase shift can be suppressed and thus high-frequency characteristics can be improved.
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