发明名称 |
Method for producing semiconductor devices and cutting fuses |
摘要 |
Herein disclosed are a method of producing a semiconductor device. Especially in a device constructed to have a defective circuit replaced by a redundant circuit, after a fuse is cut by exposure to a laser beam, a portion to be fused is irradiated in a predetermined gas atmosphere with an optical ray to selectively form a CVD film thereby to form a protection film over the fuse so that the formation of the protection film is simplified after the fuse is cut, whereby any rise in the production cost is suppressed while improving the production yield and reliability.
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申请公布号 |
US4795720(A) |
申请公布日期 |
1989.01.03 |
申请号 |
US19870096778 |
申请日期 |
1987.09.14 |
申请人 |
HITACHI, LTD. |
发明人 |
KAWANABE, TAKAO;INOUE, MORIO;HONGO, MIKIO |
分类号 |
H01L27/10;H01L21/768;H01L21/82;H01L23/525;(IPC1-7):H01L21/465;H01L21/473 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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