| 摘要 |
PURPOSE:To obtain the manufacture of a semiconductor quantum box structure aiming at application to various semiconductor devices including an optical device by etching a quantum well layer using micromolecules as masks and filling the quantum well layer with a semiconductor material. CONSTITUTION:Quantum well structure 23 in which two kinds of semiconductor thin-films having different band gaps are laminated is grown onto a semiconduc tor substrate 21, micromolecules 25 are applied onto the quantum well structure 23, the quantum well layer 23 is etched while employing the micromolecules as masks, and the quantum well layer 23 is filled with a semiconductor material. An N-AlGaAs buffer layer 22, the GaAs/AlGaAs multiple quantum well(MQW) structure 23 and a P-AlGaAs clad 24 are grown onto the N-GaAs substrate 21, and the polystyrene balls 25 having a diameter of 200Angstrom are floated into an organic solvent containing PMMA and spin-coated. The MQW layer 23 is worked to an island shape having a diameter of 150Angstrom by RIBE, the masks are removed, and the whole is filled with P-AlGaAs. |
