| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method which can easily achieve a compound semiconductor substrate including on an Si substrate, GaAsSb which has good crystallinity and excellent surface flatness.SOLUTION: A manufacturing method of a present embodiment is a manufacturing method of compound semiconductor substrate in which a first compound semiconductor layer and a second compound semiconductor layer are alternately stacked on an Si substrate. A process of forming the second compound semiconductor layer is a process of simultaneously exposing a Ga material, an As material and an Sb material. A ratio of a molecular beam intensity of the Sb material to a molecular beam intensity of the Ga material, which is necessary for making a formation speed of the second compound semiconductor layer be 1 μm per one hour is not less than 1. |
