| 发明名称 |
CIGS/SILICON THIN-FILM TANDEM SOLAR CELL |
| 摘要 |
A method of making a CIGS/inorganic thin film tandem semiconductor device including the steps of depositing a textured buffer layer on an inexpensive substrate, depositing a metal-inorganic film from a eutectic alloy on the buffer layer, the metal being selected from a group of CIGS elements, and adding the remaining CIGS elements to the metal, thereby growing a CIGS film on the inorganic film for the tandem semiconductor device. |
| 申请公布号 |
US2016359061(A1) |
申请公布日期 |
2016.12.08 |
| 申请号 |
US201615238050 |
申请日期 |
2016.08.16 |
| 申请人 |
Chaudhari Ashok |
发明人 |
Chaudhari Ashok |
| 分类号 |
H01L31/032;H01L31/0725;H01L31/074;H01L31/0236 |
主分类号 |
H01L31/032 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of making a CIGS/inorganic thin film tandem semiconductor device comprising the steps of:
depositing a textured buffer layer on an inexpensive substrate; depositing a metal-inorganic film from a eutectic alloy on said buffer layer, said metal being selected from a group of CIGS elements; adding the remaining CIGS elements to said metal, thereby growing a CIGS film on the inorganic film for the tandem semiconductor device. |
| 地址 |
Briarcliff Manor NY US |
