发明名称 MICROWAVE PLASMA ASSISTED GAS JET DEPOSITION OF THIN FILM MATERIALS
摘要 A novel method and apparatus of fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures.
申请公布号 WO9117285(A1) 申请公布日期 1991.11.14
申请号 WO1991US03140 申请日期 1991.05.07
申请人 SCHMITT TECHNOLOGY ASSOCIATES 发明人 SCHIMITT, JEROME, J.;HALPERN, BRET, L.
分类号 C23C16/452;C23C16/511;C23C16/513 主分类号 C23C16/452
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