MEMORY FOR DIGITAL ELECTRONICAL SIGNALS

摘要

The memory includes mechanical storage elements (1) with a non-volatile memory. They comprise a membrane (2), which arches in the form of a bridge over a depression (6). Compressive stresses in the membrane (2) give it a bistable behaviour, i.e. it deflects into one of two positional states (3; 4). By means of electrostatic or electromagnetic forces, the membrane (2) is switched over from one positional state (3; 4) into the other. The invention is suitable for integration of the mechanical and electronic elements on a substrate (7). ……