| 摘要 |
A thin film transistor of amorphous silicon is composed of glass substrate (1), gate electrodes (2A,2B), first and second gate insulating layers (3A,3B), amorphous semiconductor layer (4), ohmic layer (5), source electrode (6), drain electrode (7), and transparent conductive film (8). The first gate insulating layer (3A) with the thickness of 2500 angstrom is formed from silicon nitride prepared by mixing SiH4 and NH3 in the ratio of 1:7.5, and the second gate insulating layer (3B) with the thickness of 500 angstrom is formed from silicon nitride prepared by mixing SiH4 and NH3 in the ratio of 1:1 - 1:4. The produced transistor shows a good on-current property.'
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