| 摘要 |
There is provide an inspection apparatus configured to detect a change in shape of a pattern in the depth direction o the pattern, the apparatus including: an illumination section 20 which illuminates a wafer 5 having a periodic pattern with an illumination light having transmittance with respect to the wafer 5; a reflected diffraction light detecting section 30 which outputs a first detection signal by receiving a reflected diffraction light generated by the pattern on a surface, of the wafer, on an illumination side illuminated with the illumination light; a transmitted diffraction light detecting section 40 which outputs a second detection signal by receiving a transmitted diffraction light generated by the pattern to a back surface, of the wafer, opposite to the illumination side; and a signal processing section 51 which detects a state of the pattern based on at least one of the first and second detection signals. |
