发明名称
摘要 <p>A projection exposure system is disclosed, which includes: a laser; a mask stage for supporting a photomask; a wafer stage for supporting a wafer; an illumination optical system effective to illuminate the photomask by use of a light from the laser; a projection optical system for projecting, upon the wafer, a circuit pattern formed on the photomask; an adjusting device for adjusting the wavelength to be emitted from the laser; a discharge tube disposed on a path for at least a portion of the light from the laser and being adapted to emit a predetermined line spectrum; a detecting device for detecting a change in a discharged electric current from the discharge tube; and a control device for controlling the adjusting device on the basis of an output signal from the detecting device.</p>
申请公布号 JPH0480554(B2) 申请公布日期 1992.12.18
申请号 JP19870114432 申请日期 1987.05.13
申请人 CANON KK 发明人 AKETAGAWA MASATO
分类号 H01S3/08;B23K26/06;B23K26/42;G03F7/20;H01L21/027;H01S3/137;H01S3/225 主分类号 H01S3/08
代理机构 代理人
主权项
地址
您可能感兴趣的专利