发明名称 |
WAFER SCALE SEMICONDUCTOR DEVICE |
摘要 |
A wafer scale semiconductor device provides a bonding pad, the bonding pad comprising: an electrically floating conductor layer (13) contactable with a bonding wire, an insulating layer (22) formed under the conductor layer, and a buffer layer (21) formed under the insulating layer in a manner that the shape of the buffer layer corresponds to that of the conductor layer the buffer layer adsorbing an applied shock. |
申请公布号 |
KR930004252(B1) |
申请公布日期 |
1993.05.22 |
申请号 |
KR19900014750 |
申请日期 |
1990.09.18 |
申请人 |
FUJITSU LTD. |
发明人 |
SUZUKI, TAKIAKI;TOKORO, MASAHIRO;NOMURA, YUKIHIRO;TATEMATSU, TAKEO |
分类号 |
H01L21/822;H01L21/60;H01L23/485;H01L23/52;H01L23/532;H01L27/04 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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