发明名称 WAFER SCALE SEMICONDUCTOR DEVICE
摘要 A wafer scale semiconductor device provides a bonding pad, the bonding pad comprising: an electrically floating conductor layer (13) contactable with a bonding wire, an insulating layer (22) formed under the conductor layer, and a buffer layer (21) formed under the insulating layer in a manner that the shape of the buffer layer corresponds to that of the conductor layer the buffer layer adsorbing an applied shock.
申请公布号 KR930004252(B1) 申请公布日期 1993.05.22
申请号 KR19900014750 申请日期 1990.09.18
申请人 FUJITSU LTD. 发明人 SUZUKI, TAKIAKI;TOKORO, MASAHIRO;NOMURA, YUKIHIRO;TATEMATSU, TAKEO
分类号 H01L21/822;H01L21/60;H01L23/485;H01L23/52;H01L23/532;H01L27/04 主分类号 H01L21/822
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