发明名称
摘要 PURPOSE:To realize position matching with high and reliable accuracy by providing recessions and protrusions on a substrate, covering the vicinity thereof with film consisting of a silicon nitride of metal and executing pattern position matching with the recessions and protrusions used as the mark for position matching. CONSTITUTION:A mask 12 for forming the mark for position matching on the surface of an Si substrate. The mark for position matching by a groove 13 is formed by dry etching of a substrate 11. Then, the mask 12 is removed. A film 14 consisting of a nitride of metal is deposited on the surface of substrate 11. The patterning is then carried out, leaving the film 14 in the groove and neighborhood thereof. A film 15 consisting of metal silicon nitride is formed by mutual diffusion between the film 14 having completed heating process and the substrate 11. The film 15 provides the effect of the mask for oxidation of mark for position matching deposited and the Si substrate 11 in the vicinity thereof and the effect of the mark for dry etching.
申请公布号 JPH0544175(B2) 申请公布日期 1993.07.05
申请号 JP19830181157 申请日期 1983.09.29
申请人 FUJITSU LTD 发明人 KOBAYASHI KOICHI
分类号 G03F9/00;H01L21/027;H01L21/30;(IPC1-7):H01L21/027 主分类号 G03F9/00
代理机构 代理人
主权项
地址